Gao Xuan P A, Mills Allen P, Ramirez Arthur P, Pfeiffer Loren N, West Kenneth W
Department of Applied Physics & Applied Math, Columbia University, New York City, New York 10027, USA.
Phys Rev Lett. 2002 Jul 1;89(1):016801. doi: 10.1103/PhysRevLett.89.016801. Epub 2002 Jun 12.
We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) in a 10 nm GaAs quantum well with densities in the range of (0.7-1.6) x 10(10) cm(-2) on the metallic side of the zero-field "metal-insulator transition." In a parallel field well above B(c) that suppresses the metallic conductivity, the 2DHG exhibits a conductivity Delta(g)(T) approximately (1/pi) (e(2)/h)lnT reminiscent of weak localization for Fermi liquids. The experiments are consistent with the coexistence of two phases in our system: a metallic phase and a weakly insulating Fermi liquid phase.
我们研究了零场“金属-绝缘体转变”金属侧密度范围为(0.7 - 1.6)×10¹⁰ cm⁻²的10 nm砷化镓量子阱中高迁移率二维空穴气(2DHG)的磁输运性质。在远高于抑制金属导电性的B(c)的平行磁场中,2DHG表现出电导率Δσ(T)约为(1/π)(e²/h)lnT,这让人联想到费米液体的弱局域化。实验结果与我们系统中两个相的共存相一致:一个金属相和一个弱绝缘费米液相。