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自旋对强相互作用二维电子系统中低温电阻率最大值的影响。

Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system.

作者信息

Shashkin A A, Melnikov M Yu, Dolgopolov V T, Radonjić M M, Dobrosavljević V, Huang S-H, Liu C W, Zhu Amy Y X, Kravchenko S V

机构信息

Institute of Solid State Physics, Chernogolovka, Moscow District, 142432, Russia.

Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080, Belgrade, Serbia.

出版信息

Sci Rep. 2022 Mar 24;12(1):5080. doi: 10.1038/s41598-022-09034-x.

Abstract

The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature [Formula: see text], at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value [Formula: see text] decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of [Formula: see text] cannot be described by existing theories. The results indicate the spin-related origin of the effect.

摘要

在超清洁的SiGe/Si/SiGe量子阱中强相互作用二维电子系统的零磁场金属-绝缘体转变附近的金属侧,观察到电阻率随温度降低而增加,随后下降超过一个数量级。我们发现电阻率呈现最大值时的温度[公式:见正文]接近重整化费米温度。然而,对于自旋极化(平行)磁场中的无自旋电子,[公式:见正文]的值不是随费米温度升高,而是明显降低。现有理论无法描述观察到的[公式:见正文]行为。结果表明该效应源于自旋相关。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7812/8948273/3060151b8168/41598_2022_9034_Fig1_HTML.jpg

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