Shalabi A S
Department of Chemistry, Faculty of Science, Benha University, P.O. Box 13518, Benha, Egypt.
J Comput Chem. 2002 Aug;23(11):1104-20. doi: 10.1002/jcc.10109.
The twofold potentials of F(A)(I):Au(+) and F(A)(II)Cu(+) color centers at the low coordinated surfaces of AgBr thin films in providing tunable laser activity and photographic sensitization were investigated using ab initio methods of molecular electronic structure calculations. Clusters of variable size were embedded in simulated Coulomb fields that closely approximated the Madelung fields of the host surfaces, and the nearest neighbor ions to the F(A) defect site were allowed to relax to equilibrium in each case. Based on the calculated Stokes shifted optical transition bands and horizontal shifts along the configuration coordinate diagrams, both F(A)(I):Au(+) and F(A)(II):Cu(+) color centers were found to be laser active. The laser activity faded quickly as the bromide ion coordination decreased from 5 (flat) to 4 (edge) to 3 (corner) and as the size of the impurity cation increased from Cu(+) to Au(+). The latter relation was explainable in terms of the axial perturbation of the impurity cation. The smallest calculated Stokes-shift at the corner surface suggested that emission had the same oscillator strength as absorption. All relaxed excited states RESs of the defect containing surfaces were deep below the lower edges of the conduction bands of the defect free ground state surfaces, indicating that F(A)(I):Au(+) and F(A)(II):Cu(+) are suitable laser defects. The probability of orientational destruction of the two centers attributed to the assumed RES saddle point ion configurations along the <110> axis was found to be directly proportional to the size of the impurity cation, with activation energy barriers of about 0.655-3.294 eV for Cu(+), and about 1.887-3.404 eV for Au(+). The possibility of exciton (energy) transfer from the sites of higher coordination to those of lower coordination is demonstrated. The more laser active F(A)(II):Cu(+) center was more easily formed than the less laser active F(A)(I):Au(+) center. The Glasner-Tompkins empirical relation was generalized to include F(A) centers at the low coordinated surfaces of silver bromide thin film. As far as color photographic sensitization is concerned, the lowest unoccupied molecular orbitals of the selected dye molecules in the excited states were high enough for electron injection. F(A) defect formation and rotational diffusion of silver clusters reduced the energy gaps between the excited dye molecules and the lower edges of the conduction bands and allowed for hole injection. About 54-60% of the reduction of silver ions at the flat surface of AgBr was attributed to the host anions and F(A) defect formation, leaving about 40-46% for the reduction of photoelectrons as well as the electrons of the developer or dye molecules. The unrelaxed rotational diffusions of the central Ag(4) by 90 degrees decreased the latter percentage, but were severely hindered by activation energy barriers.
利用分子电子结构计算的从头算方法,研究了AgBr薄膜低配位表面上F(A)(I):Au(+)和F(A)(II)Cu(+)色心在提供可调谐激光活性和感光作用方面的双重潜力。将不同大小的团簇嵌入模拟的库仑场中,该场紧密近似主体表面的马德隆场,并且在每种情况下都允许F(A)缺陷位点的最近邻离子弛豫到平衡状态。基于计算出的斯托克斯位移光学跃迁带和沿构型坐标图的水平位移,发现F(A)(I):Au(+)和F(A)(II):Cu(+)色心都具有激光活性。随着溴离子配位从5(平面)降至4(边缘)再降至3(角),以及杂质阳离子尺寸从Cu(+)增加到Au(+),激光活性迅速减弱。后一种关系可以用杂质阳离子的轴向扰动来解释。在角表面计算出的最小斯托克斯位移表明发射与吸收具有相同的振子强度。含缺陷表面的所有弛豫激发态(RESs)都远低于无缺陷基态表面导带的下边缘,表明F(A)(I):Au(+)和F(A)(II):Cu(+)是合适的激光缺陷。发现这两个中心由于沿<110>轴假定的RES鞍点离子构型而导致的取向破坏概率与杂质阳离子的尺寸成正比,对于Cu(+),活化能垒约为0.655 - 3.294 eV,对于Au(+),约为1.887 - 3.404 eV。证明了激子(能量)从高配位位点转移到低配位位点的可能性。激光活性更高的F(A)(II):Cu(+)中心比激光活性较低的F(A)(I):Au(+)中心更容易形成。格拉斯纳 - 汤普金斯经验关系被推广到包括溴化银薄膜低配位表面的F(A)中心。就彩色感光而言,所选染料分子在激发态的最低未占据分子轨道足够高以进行电子注入。F(A)缺陷的形成和银团簇的旋转扩散减小了激发染料分子与导带下边缘之间的能隙,并允许空穴注入。AgBr平面表面上约54 - 60%的银离子还原归因于主体阴离子和F(A)缺陷的形成,其余约40 - 46%用于光电子以及显影剂或染料分子的电子还原。中心Ag(4)未弛豫的90度旋转扩散降低了后一百分比,但受到活化能垒的严重阻碍。