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Polarization-based adjustable memory behavior in relaxor ferroelectrics.

作者信息

Granzow T, Woike Th, Wöhlecke M, Imlau M, Kleemann W

机构信息

Institut für Mineralogie, Universität zu Köln, Zülpicherstrasse 49b, D-50674 Köln, Germany.

出版信息

Phys Rev Lett. 2002 Sep 16;89(12):127601. doi: 10.1103/PhysRevLett.89.127601. Epub 2002 Aug 30.

Abstract

The irreversible decay of the spontaneous polarization above the phase-transition temperature is a limiting factor in any application of ferroelectric crystals. Here we show that electric fields applied at high temperatures induce a preferred direction in the crystal which is stable even after repeated heating and cooling through the phase transition. This preference in direction leads to a reorientation of domains in the ferroelectric phase. We use pyroelectric measurements to show that the directional preference originates from internal charge carriers interacting with domain walls.

摘要

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