Lou Kuo-Long, Huang Po-Tsang, Shiau Yu-Shuan, Shiau Yuh-Yuan
Graduate Institute of Oral Biology, Medical College, National Taiwan University, Taipei, Taiwan.
J Mol Recognit. 2002 Jul-Aug;15(4):175-9. doi: 10.1002/jmr.571.
The carboxyl terminus of S3 segment (S3(C)) in voltage-gated potassium channels was proposed to bear the binding site for gating modifier toxins like Hanatoxin and a helical secondary structural arrangement was suggested. Due to the lack of complete structure in high resolution for such a channel molecule, no further direct experimental data to elucidate the mechanism for their binding conformations could thus far be derived. In order to examine the putative three-dimensional structure of S3(C) and to illustrate the residues required for Hanatoxin binding, molecular simulation and docking were performed, based on the solution structure of Hanatoxin and the structural information from lysine-scanning results for S3(C) fragment. From our results, it is indicated that both hydrophobic and electrostatic interactions are utilized to stabilize the toxin binding. Detailed docking residues and appropriate orientation for binding regarding hydrophobic/-philic environments are also described. Compared with the functional data proposed by previous studies, the helical structural arrangement for the C-terminus of S3 segment in voltage-gated potassium channels can therefore be further emphasized.
电压门控钾通道中S3片段的羧基末端(S3(C))被认为是诸如汉拿毒素等门控修饰毒素的结合位点,并有人提出了一种螺旋二级结构排列。由于此类通道分子缺乏高分辨率的完整结构,迄今为止尚无进一步的直接实验数据来阐明它们结合构象的机制。为了研究S3(C)的推测三维结构并阐明汉拿毒素结合所需的残基,基于汉拿毒素的溶液结构和S3(C)片段赖氨酸扫描结果的结构信息进行了分子模拟和对接。从我们的结果表明,疏水相互作用和静电相互作用都被用于稳定毒素结合。还描述了关于疏水/亲水环境的详细对接残基和合适的结合方向。与先前研究提出的功能数据相比,因此可以进一步强调电压门控钾通道中S3片段C末端的螺旋结构排列。