Model investigations on the effect of Si transport on the nanocrystallization of amorphous FeSiB-(Cu,Nb).

Amorphous material of the class FeSiB-(Cu,Nb) has been investigated with a background of soft-magnetic application of the corresponding nanocrystalline material. Thin-film analytical methods (SIMS, AES, TEM) have been used to study the diffusion of Si in such materials prepared as layer systems by magnetron sputter deposition. Significant interdiffusion occurs even at low temperatures - approximately 400 degrees C. Quantitative description failed, however, because formation of new iron monosilicide phases begins above this temperature. It is concluded that only high-mass-resolution SIMS or radioactive tracer analysis can be used for successful acquisition of information at this material system.