Andrews S R, Armitage A, Huggard P G, Hussain A
Department of Physics, University of Bath, Bath BA2 7AY, UK.
Phys Med Biol. 2002 Nov 7;47(21):3705-10. doi: 10.1088/0031-9155/47/21/305.
We have studied the sensitivity and noise of optically gated dipole receivers made from ion implanted Si and GaAs in an optimized time domain THz spectrometer. The spectrometer uses a room temperature, dc biased, semi-insulating GaAs stripline source capable of generating up to 30 microW average power. The 10% amplitude system bandwidth for 10 microm (50 microm) dipole receivers is 3 THz (1.5 THz). A dynamic range of 4 x 10(5) Hz(-1/2) is achieved using a 10 microm dipole GaAs receiver and 2 x 10(6) Hz(-1/2) using a 50 microm dipole for a total laser power of 110 mW and THz beam power of 20 microW. The dynamic range achieved with comparable silicon receivers is a factor of 2 smaller.
我们在优化的时域太赫兹光谱仪中研究了由离子注入硅和砷化镓制成的光控偶极子接收器的灵敏度和噪声。该光谱仪使用室温、直流偏置的半绝缘砷化镓带状线源，能够产生高达30微瓦的平均功率。对于10微米（50微米）的偶极子接收器，10%幅度系统带宽为3太赫兹（1.5太赫兹）。使用10微米偶极子砷化镓接收器时动态范围达到4×10⁵Hz⁻¹/²，使用50微米偶极子且总激光功率为110毫瓦、太赫兹光束功率为20微瓦时动态范围达到2×10⁶Hz⁻¹/²。具有可比性能的硅接收器所实现的动态范围要小2倍。
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