存在不应期情况下的神经元建模范式。
A neuronal modeling paradigm in the presence of refractoriness.
作者信息
Buonocore A, Giorno V, Nobile A G, Ricciardi L M
机构信息
Dipartimento di Matematica e Applicazioni, Università di Napoli Federico II, Via Cintia, Naples 80126, Italy.
出版信息
Biosystems. 2002 Oct-Dec;67(1-3):35-43. doi: 10.1016/s0303-2647(02)00061-8.
A mathematical characterization of the membrane potential as an instantaneous return process in the presence of refractoriness is investigated for diffusion models of single neuron's activity, assuming that the firing threshold acts as an elastic barrier. Steady-state probability densities and asymptotic moments of the neuronal membrane potential are explicitly obtained in a form that is suitable for quantitative evaluations. For the Ornstein-Uhlenbeck (OU) and Feller neuronal models, closed form expression are obtained for asymptotic mean and variance of the neuronal membrane potential and an analysis of the different features exhibited by the above mentioned models is performed.
针对单神经元活动的扩散模型，研究了在存在不应期的情况下将膜电位表征为瞬时返回过程的数学特征，假设放电阈值充当弹性屏障。以适合定量评估的形式明确获得了神经元膜电位的稳态概率密度和渐近矩。对于奥恩斯坦 - 乌伦贝克（OU）和费勒神经元模型，获得了神经元膜电位渐近均值和方差的闭式表达式，并对上述模型表现出的不同特征进行了分析。
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