Nohira Toshiyuki, Yasuda Kouji, Ito Yasuhiko
Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan.
Nat Mater. 2003 Jun;2(6):397-401. doi: 10.1038/nmat900.
Silicon dioxide (SiO(2)) is conventionally reduced to silicon by carbothermal reduction, in which the oxygen is removed by a heterogeneous-homogeneous reaction sequence at approximately 1,700 degrees C. Here we report pinpoint and bulk electrochemical methods for removing oxygen from solid SiO(2) in a molten CaCl(2) electrolyte at 850 degrees C. This approach involves a 'contacting electrode', in which a metal wire supplies electrons to a selected region of the insulating SiO(2). Bulk reduction of SiO(2) is possible by increasing the number of contacting points. The same method was also demonstrated with molten LiCl-KCl-CaCl(2) at 500 degrees C. The novelty and relative simplicity of this method might lead to new processes in silicon semiconductor technology, as well as in high-purity silicon production. The methodology may be applicable to electrochemical processing of a wide variety of insulating materials, provided that the electrolyte dissolves the appropriate constituent ion(s) of the material.
传统上,二氧化硅(SiO₂)通过碳热还原法被还原为硅,在此过程中,氧在约1700摄氏度下通过异质-均相反应序列被去除。在此,我们报告了在850摄氏度的熔融氯化钙电解质中从固态SiO₂中去除氧的定点和体相电化学方法。这种方法涉及一个“接触电极”,其中金属丝向绝缘的SiO₂的选定区域提供电子。通过增加接触点的数量,可以实现SiO₂的体相还原。在500摄氏度的熔融LiCl-KCl-CaCl₂中也证明了同样的方法。这种方法的新颖性和相对简单性可能会在硅半导体技术以及高纯度硅生产中带来新的工艺。该方法可能适用于多种绝缘材料的电化学加工,前提是电解质能溶解该材料的适当组成离子。