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半导体氧化物纳米带的拉曼光谱研究

Raman studies of semiconducting oxide nanobelts.

作者信息

Mcguire K, Pan Z W, Wang Z L, Milkie D, Menéndez J, Rao A M

机构信息

Department of Physics and Astronomy, Clemson University, Clemson, South Carolina, USA.

出版信息

J Nanosci Nanotechnol. 2002 Oct;2(5):499-502. doi: 10.1166/153348802760394070.

Abstract

Crystalline nanobelts of ZnO and SnO2 were prepared from a thermal evaporation of oxide powders inside an alumina tube in the absence of catalysts. Typical dimensions of the nanobelt samples ranged from approximately 10 to 100 microns in length, 30 to 300 nm in width, and 6 to 30 nm in thickness. Room temperature Raman spectra were obtained on pressed mats of nanobelt samples and compared with the corresponding spectra of the starting oxide powders and bulk materials. Collectively, our Raman data indicated that the as-prepared nanobelt samples used in this study were oxygen deficient. Upon annealing at 900 degrees C in flowing oxygen for 1 h, the nanobelt samples exhibited Raman features that corresponded to those expected in respective bulk semiconducting oxides. The dimensions of the nanobelts were a bit too large to expect significant quantum size effects on the phonon structure similar to those observed in carbon nanotubes and short-period semiconductor superlattices.

摘要

在无催化剂的情况下,通过在氧化铝管内对氧化物粉末进行热蒸发制备了ZnO和SnO₂的晶体纳米带。纳米带样品的典型尺寸范围为:长度约10至100微米,宽度30至300纳米,厚度6至30纳米。在纳米带样品的压制垫上获得了室温拉曼光谱,并与起始氧化物粉末和块状材料的相应光谱进行了比较。总体而言,我们的拉曼数据表明,本研究中使用的制备好的纳米带样品缺氧。在流动氧气中于900℃退火1小时后,纳米带样品呈现出与各自块状半导体氧化物中预期的拉曼特征相对应的特征。纳米带的尺寸有点太大,以至于无法像在碳纳米管和短周期半导体超晶格中观察到的那样,预期对声子结构有显著的量子尺寸效应。

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