Chen Zhi-Gang, Li Feng, Liu Gang, Tang Yongbin, Cong Hongtao, Lu Gao Qing, Cheng Hui-Ming
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P R China.
J Nanosci Nanotechnol. 2006 Mar;6(3):704-7. doi: 10.1166/jnn.2006.129.
High purity one-dimensional ZnO nanobelts were synthesized by thermally evaporating commercial ZnS powders in a hydrogen-oxygen mixture gas at 1050 degrees C. It was found that these ZnO nanobelts had a single crystal hexagonal wurtzite structure growing along the [0001] direction. They had a rectangle-shaped cross-section with typical widths of 20 to 100 nanometers and lengths of up to hundreds of micrometers with lattice constants of a = 0.325 nm and c = 0.520 nm. The self-catalytic hydrogen-oxygen assisted growth of ZnO nanobelt is discussed. The photoluminescence (PL) characterization of the ZnO nanobelts shows strong near-band UV emission (about 383 nm) and one broad peak at 501 nm, which indicates that the ZnO nanobelts have good potential application in optoelectronic devices.
通过在1050摄氏度的氢氧混合气体中热蒸发商用ZnS粉末，合成了高纯度的一维ZnO纳米带。发现这些ZnO纳米带具有沿[0001]方向生长的单晶六方纤锌矿结构。它们具有矩形横截面，典型宽度为20至100纳米，长度可达数百微米，晶格常数a = 0.325纳米，c = 0.520纳米。讨论了ZnO纳米带的自催化氢氧辅助生长。ZnO纳米带的光致发光（PL）表征显示出强烈的近带紫外发射（约383纳米）和在501纳米处的一个宽峰，这表明ZnO纳米带在光电器件中具有良好的潜在应用。
