Gao Shanmin, Xie Yi, Zhu Liying, Tian Xiaobo
Structure Research Laboratory, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
Inorg Chem. 2003 Aug 25;42(17):5442-7. doi: 10.1021/ic034327n.
The thermostability and reactivity of GaP nanocrystals in O(2) were investigated using the thermogravimetric analysis (TGA), differential thermal analysis (DTA), powder X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) analysis techniques. alpha-Ga(2)O(3) nanoparticles, nano-hollow-particles, or nanorods and nanotubes can be separately obtained from the oxidation of nanocrystalline GaP at 400 degrees C for 30 min in dry O(2) atmosphere via manipulating different heating rates. Transmission electron microscopy (TEM) and energy-dispersive X-ray spectrometry (EDX) analysis showed that the products were all alpha-Ga(2)O(3) but with different morphologies when different heating rates were applied. The formation mechanisms of the different morphological alpha-Ga(2)O(3) nanocrystals were discussed.
利用热重分析（TGA）、差示热分析（DTA）、粉末X射线衍射（XRD）和X射线光电子能谱（XPS）分析技术，研究了GaP纳米晶体在O(2)中的热稳定性和反应活性。通过控制不同的加热速率，在干燥的O(2)气氛中于400℃将纳米晶GaP氧化30分钟，可分别获得α-Ga(2)O(3)纳米颗粒、纳米空心颗粒或纳米棒及纳米管。透射电子显微镜（TEM）和能量色散X射线光谱（EDX）分析表明，当采用不同的加热速率时，产物均为α-Ga(2)O(3)，但形态不同。讨论了不同形态的α-Ga(2)O(3)纳米晶体的形成机制。
