[静水压力下半导体微腔中激子与光子行为的研究]

[The study of the behavior of exciton and photon within semiconductor microcavity under hydrostatic pressure].

作者信息

Zhang Ji-dong, Chen Jing-hao, Deng Yuan-ming, An Long, Zhang Hao, Yang Fu-hua, Li Guo-hua, Zheng Hou-zhi

机构信息

National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

出版信息

Guang Pu Xue Yu Guang Pu Fen Xi. 2003 Apr;23(2):223-5.

PMID:12961854

Abstract

We studied, for the first time, the strong coupling between exciton and cavity mode within semiconductor microcavity under hydrostatic pressure, and measured the Rabi splitting. The strong coupling between exciton and cavity mode, and so Rabi splitting appear clearly as the applied pressure reaches 0.37-0.41 GPa. The experiment result shows that hydrostatic pressure not only can tune the coupling between exciton and cavity mode effectively, but also can keep exciton property almost unchanged during the whole tuning procedure in contrast to other tuning method (temperature field et al). Our result agrees with the related theory very well. The Rabi splitting, extracted from fitting the measured mode-energy vs pressure curves with correspending theoretical model, is equal to 6 meV.

摘要

我们首次研究了静水压力下半导体微腔内激子与腔模之间的强耦合，并测量了拉比分裂。当施加的压力达到0.37 - 0.41 GPa时，激子与腔模之间的强耦合以及拉比分裂清晰地显现出来。实验结果表明，与其他调谐方法（如温度场等）相比，静水压力不仅可以有效地调节激子与腔模之间的耦合，而且在整个调谐过程中几乎可以保持激子特性不变。我们的结果与相关理论非常吻合。通过用相应的理论模型拟合测量的模式能量与压力曲线提取的拉比分裂等于6 meV。