Peter E, Senellart P, Martrou D, Lemaître A, Hours J, Gérard J M, Bloch J
Laboratoire de Photonique et Nanostructures, LPN/CNRS, Route de Nozay, 91460 Marcoussis, France.
Phys Rev Lett. 2005 Aug 5;95(6):067401. doi: 10.1103/PhysRevLett.95.067401. Epub 2005 Aug 1.
We report on the observation of the strong-coupling regime between the excitonic transition of a single GaAs quantum dot and a discrete optical mode of a microdisk microcavity. Photoluminescence is performed at various temperatures to tune the quantum dot exciton with respect to the optical mode. At resonance, we observe a clear anticrossing behavior, signature of the strong-coupling regime. The vacuum Rabi splitting amounts to 400 microeV and is twice as large as the individual linewidths.
我们报道了关于单个砷化镓量子点的激子跃迁与微盘微腔的离散光学模式之间强耦合状态的观测结果。在不同温度下进行光致发光，以相对于光学模式来调节量子点激子。在共振时，我们观察到明显的反交叉行为，这是强耦合状态的特征。真空拉比分裂达到400微电子伏特，是各个线宽的两倍。
