Sharma Parmanand, Gupta Amita, Rao K V, Owens Frank J, Sharma Renu, Ahuja Rajeev, Guillen J M Osorio, Johansson Börje, Gehring G A
Department of Materials Science-Tmfy-MSE, Royal Institute of Technology, SE 10044 Stockholm, Sweden.
Nat Mater. 2003 Oct;2(10):673-7. doi: 10.1038/nmat984. Epub 2003 Sep 21.
The search for ferromagnetism above room temperature in dilute magnetic semiconductors has been intense in recent years. We report the first observations of ferromagnetism above room temperature for dilute (<4 at.%) Mn-doped ZnO. The Mn is found to carry an average magnetic moment of 0.16 mu(B) per ion. Our ab initio calculations find a valance state of Mn(2+) and that the magnetic moments are ordered ferromagnetically, consistent with the experimental findings. We have obtained room-temperature ferromagnetic ordering in bulk pellets, in transparent films 2-3 microm thick, and in the powder form of the same material. The unique feature of our sample preparation was the low-temperature processing. When standard high-temperature (T > 700 degrees C) methods were used, samples were found to exhibit clustering and were not ferromagnetic at room temperature. This capability to fabricate ferromagnetic Mn-doped ZnO semiconductors promises new spintronic devices as well as magneto-optic components.
近年来,人们一直在积极探索稀磁半导体中高于室温的铁磁性。我们首次报道了对于稀(<4原子%)锰掺杂氧化锌高于室温的铁磁性观测结果。发现每个锰离子携带平均磁矩为0.16 μB。我们的从头算计算得出锰的价态为Mn(2+),并且磁矩呈铁磁有序排列,这与实验结果一致。我们已经在块状颗粒、2 - 3微米厚的透明薄膜以及相同材料的粉末形式中获得了室温铁磁有序排列。我们样品制备的独特之处在于低温处理。当使用标准高温(T > 700摄氏度)方法时,发现样品会出现团聚现象,并且在室温下不具有铁磁性。这种制造铁磁性锰掺杂氧化锌半导体的能力有望应用于新型自旋电子器件以及磁光组件。