Ishida Y, Sarma D D, Okazaki K, Okabayashi J, Hwang J I, Ott H, Fujimori A, Medvedkin G A, Ishibashi T, Sato K
Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan.
Phys Rev Lett. 2003 Sep 5;91(10):107202. doi: 10.1103/PhysRevLett.91.107202.
The chemical states of the ZnGeP(2):Mn interface which shows ferromagnetism above room temperature have been studied by photoemission spectroscopy. Mn deposition on the ZnGeP2 substrate heated to 400 degrees C induced Mn substitution for Zn and then the formation of metallic Mn-Ge-P compounds. Depth profile studies have shown that Mn 3d electrons changed their character from itinerant to localized along the depth, and in the deep region, dilute divalent Mn species (<5% Mn) was observed with a coexisting metallic Fermi edge of non-Mn 3d character. The possibility of hole doping through Mn substitution for Ge and/or Zn vacancy is discussed.
通过光发射光谱法研究了在室温以上表现出铁磁性的ZnGeP₂:Mn界面的化学状态。在加热到400℃的ZnGeP₂衬底上沉积Mn会导致Mn取代Zn，进而形成金属Mn-Ge-P化合物。深度剖析研究表明，Mn 3d电子的性质沿深度从巡游态变为局域态，并且在较深区域观察到稀释的二价Mn物种（<5% Mn）以及具有非Mn 3d特征的共存金属费米边。讨论了通过Mn取代Ge和/或Zn空位进行空穴掺杂的可能性。
