Lai Chen L, Lin Sheng H
Department of Chemical Engineering, Yuan Ze University, Chungli 320, Taiwan, ROC.
Chemosphere. 2004 Jan;54(3):235-42. doi: 10.1016/j.chemosphere.2003.08.014.
Treatment of copper chemical mechanical polishing (CMP) wastewater from a semiconductor plant by electrocoagulation is investigated. The CMP wastewater was characterized by high suspended solids (SS) content, high turbidity (NTU), chemical oxygen demand (COD) concentration up to 500 mgl(-1) and copper concentration up to 100 mgl(-1). In the present study, electrocoagulation was employed to treat the CMP wastewater with an attempt to simultaneously lower its turbidity, copper and COD concentrations. The test results indicated that electrocoagulation with Al/Fe electrode pair was very efficient and able to achieve 99% copper ion and 96.5% turbidity removal in less than 30 min. The COD removal obtained in the treatment was better than 85%, with an effluent COD below 100 mgl(-1). The effluent wastewater was very clear and its quality exceeded the direct discharge standard. In addition, sludge settling velocities after electrocoagulation were measured and the data were employed to verify the empirical sludge settling velocity models. Finally, the sludge settling characteristic data were also utilized to establish the relation between the solids flux (G) and the initial solids concentration.
研究了用电凝法处理半导体工厂的铜化学机械抛光（CMP）废水。该CMP废水的特征是悬浮固体（SS）含量高、浊度（NTU）高、化学需氧量（COD）浓度高达500mg/L且铜浓度高达100mg/L。在本研究中，采用电凝法处理CMP废水，试图同时降低其浊度、铜和COD浓度。测试结果表明，使用铝/铁电极对进行电凝非常有效，能够在不到30分钟的时间内去除99%的铜离子和96.5%的浊度。处理过程中COD的去除率优于85%，出水COD低于100mg/L。出水非常清澈，其水质超过了直接排放标准。此外，还测量了电凝后的污泥沉降速度，并利用这些数据验证了经验污泥沉降速度模型。最后，污泥沉降特性数据也被用于建立固体通量（G）与初始固体浓度之间的关系。
