Kanehama Ryo, Umemiya Masamichi, Iwahori Fumiyasu, Miyasaka Hitoshi, Sugiura Ken-ichi, Yamashita Masahiro, Yokochi Yasukata, Ito Hiroshi, Kuroda Shin-ichi, Kishida Hideo, Okamoto Hiroshi
Department of Chemistry, Tokyo Metropolitan University and CREST, Minami-ohsawa 1-1, Hachioji 192-0397, Japan.
Inorg Chem. 2003 Nov 3;42(22):7173-81. doi: 10.1021/ic0344362.
New molecular charge-transfer complexes of bis(ethylenedithio)tetrathiafulvalene (ET), (ET)Cu(2)Br(4) (1), (ET)(2)Cu(6)Br(10) (2), (ET)(2)[Cu(4)Br(6)ET] (3), (ET)(2)Cu(2)Br(4) (4), (ET)(2)Cu(3)Br(7)(H(2)O) (5), and (ET)(2)Cu(6)Br(10)(H(2)O)(2) (6), have been synthesized by diffusing reaction of ET and Cu(II)Br(2). Their crystal structures and physical properties have been investigated. X-ray analyses revealed that ET molecules coordinated to the copper ions with the sulfur atoms of the ethylenedithio groups in all compounds. The Cu-S distances are found in the range 2.268(5)-2.417(8) A, being close to the typical Cu(I)-S coordination bond distances. Strong d-pi interactions between d-electrons of the copper ions and pi-electrons of the ET molecules can be expected through the Cu-S coordination bonds. ET molecules behave as trans-bidentate ligands bonding to two different copper ions in 1 and 3, as cis-bidentate ligands in 2, 5, and 6, and as monodentate ligands in 4. In the crystal structure of 3, there are two types of ET molecules in the crystal structure, where the first type is a trans-bidentate ligand and the second forms a stacking structure by itself. Compounds 1, 2, 4, and 6 show semiconducting behavior down to low temperature (sigma(RT) = 1.6 x 10(-2) S cm(-1) and E(a) = 122 meV for 1, sigma(RT) = 2.1 S cm(-1) and E(a) = 21 meV for 2, sigma(RT) = 5.4 x 10(-4) S cm(-1) and E(a) = 239 meV for 4, and sigma(RT) = 5.1 x 10(-2) S cm(-1) and E(a) = 207 meV for 6). On the other hand, in 3, a metal-like region is observed along the b-axis and c-axis, due to the contribution of stacked ET molecules, and a metal-semiconductor transition occurs at 280 and 270 K, respectively. Also, 5 exhibits metallic conductivity in the temperature ranges 240-300 and 200-300 K along the b-axis and c-axis, respectively, despite the oxidation state of ET with 2+.
通过双(乙二硫基)四硫富瓦烯(ET)与Cu(II)Br₂的扩散反应合成了新型分子电荷转移配合物,即(ET)Cu₂Br₄(1)、(ET)₂Cu₆Br₁₀(2)、(ET)₂[Cu₄Br₆ET](3)、(ET)₂Cu₂Br₄(4)、(ET)₂Cu₃Br₇(H₂O)(5)和(ET)₂Cu₆Br₁₀(H₂O)₂(6)。对它们的晶体结构和物理性质进行了研究。X射线分析表明,在所有化合物中ET分子通过乙二硫基的硫原子与铜离子配位。发现Cu - S距离在2.268(5)- 2.417(8)Å范围内,接近典型的Cu(I)- S配位键距离。通过Cu - S配位键可以预期铜离子的d电子与ET分子的π电子之间有强烈的d - π相互作用。在1和3中,ET分子作为反式双齿配体与两个不同的铜离子键合;在2、5和6中作为顺式双齿配体;在4中作为单齿配体。在3的晶体结构中,晶体结构中有两种类型的ET分子,其中第一种类型是反式双齿配体,第二种类型自身形成堆积结构。化合物1、2、4和6在低温下表现出半导体行为(1的室温电导率σ(RT) = 1.6×10⁻² S cm⁻¹,激活能E(a) = 122 meV;2的σ(RT) = 2.1 S cm⁻¹,E(a) = 21 meV;4的σ(RT) = 5.4×10⁻⁴ S cm⁻¹,E(a) = 239 meV;6的σ(RT) = 5.1×10⁻² S cm⁻¹,E(a) = 207 meV)。另一方面,在3中,由于堆积的ET分子起作用,沿b轴和c轴观察到类似金属的区域,并且分别在280 K和270 K发生金属 - 半导体转变。此外,尽管ET的氧化态为2 +,但5在240 - 300 K和200 - 300 K温度范围内分别沿b轴和c轴表现出金属导电性。