Lossin Christoph, Rhodes Thomas H, Desai Reshma R, Vanoye Carlos G, Wang Dao, Carniciu Sanda, Devinsky Orrin, George Alfred L
Neuroscience Graduate Program, Department of Medicine, Vanderbilt University, Nashville, Tennessee 37232-0275, USA.
J Neurosci. 2003 Dec 10;23(36):11289-95. doi: 10.1523/JNEUROSCI.23-36-11289.2003.
Mutations in SCN1A, the gene encoding the brain voltage-gated sodium channel alpha1 subunit (NaV1.1), are associated with at least two forms of epilepsy, generalized epilepsy with febrile seizures plus (GEFS+) and severe myoclonic epilepsy of infancy (SMEI). We examined the functional properties of four GEFS+ alleles and one SMEI allele using whole-cell patch-clamp analysis of heterologously expressed recombinant human SCN1A. One previously reported GEFS+ mutation (I1656M) and an additional novel allele (R1657C), both affecting residues in a voltage-sensing S4 segment, exhibited a similar depolarizing shift in the voltage dependence of activation. Additionally, R1657C showed a 50% reduction in current density and accelerated recovery from slow inactivation. Unlike three other GEFS+ alleles that we recently characterized, neither R1657C nor I1656M gave rise to a persistent, noninactivating current. In contrast, two other GEFS+ mutations (A1685V and V1353L) and L986F, an SMEI-associated allele, exhibited complete loss of function. In conclusion, our data provide evidence for a wide spectrum of sodium channel dysfunction in familial epilepsy and demonstrate that both GEFS+ and SMEI can be associated with nonfunctional SCN1A alleles.
编码脑电压门控钠通道α1亚基(NaV1.1)的基因SCN1A发生突变,与至少两种癫痫形式相关,即伴有热性惊厥附加症的全身性癫痫(GEFS +)和婴儿严重肌阵挛性癫痫(SMEI)。我们使用异源表达的重组人SCN1A的全细胞膜片钳分析,研究了四个GEFS +等位基因和一个SMEI等位基因的功能特性。一个先前报道的GEFS +突变(I1656M)和另一个新的等位基因(R1657C),均影响电压感应S4段中的残基,在激活的电压依赖性方面表现出类似的去极化偏移。此外,R1657C的电流密度降低了50%,并加速了从缓慢失活中的恢复。与我们最近鉴定的其他三个GEFS +等位基因不同,R1657C和I1656M均未产生持续的非失活电流。相比之下,另外两个GEFS +突变(A1685V和V1353L)以及与SMEI相关的等位基因L986F表现出完全的功能丧失。总之,我们的数据为家族性癫痫中广泛的钠通道功能障碍提供了证据,并证明GEFS +和SMEI都可能与无功能的SCN1A等位基因相关。