Lorazo Patrick, Lewis Laurent J, Meunier Michel
Département de Génie Physique et Groupe de Recherche en Physique et Technologie des Couches Minces (GCM), Ecole Polytechnique de Montréal, C.P. 6079, Succursale Centre-Ville, Montréal, Québec, Canada, H3C 3A7.
Phys Rev Lett. 2003 Nov 28;91(22):225502. doi: 10.1103/PhysRevLett.91.225502. Epub 2003 Nov 25.
The mechanisms of laser ablation in silicon are investigated close to the threshold energy for pulse durations of 500 fs and 50 ps. This is achieved using a unique model coupling carrier and atom dynamics within a unified Monte Carlo and molecular-dynamics scheme. Under femtosecond laser irradiation, isochoric heating and rapid adiabatic expansion of the material provide a natural pathway to phase explosion. This is not observed under slower, nonadiabatic cooling with picosecond pulses where fragmentation of the hot metallic fluid is the only relevant ablation mechanism.
研究了在500飞秒和50皮秒脉冲持续时间下接近阈值能量时硅中激光烧蚀的机制。这是通过在统一的蒙特卡罗和分子动力学方案中耦合载流子和原子动力学的独特模型实现的。在飞秒激光辐照下,材料的等容加热和快速绝热膨胀为相爆炸提供了自然途径。在皮秒脉冲较慢的非绝热冷却下未观察到这种情况,此时热金属流体的破碎是唯一相关的烧蚀机制。