Akutagawa Tomoyuki, Takeda Sadamu, Hasegawa Tatsuo, Nakamura Takayoshi
Research Institute for Electronic Science, Hokkaido University, Sapporo 060-0812, Japan.
J Am Chem Soc. 2004 Jan 14;126(1):291-4. doi: 10.1021/ja0377697.
One-dimensional dielectric (N.H.N)( infinity ) hydrogen-bonding chains of monoprotonated 1,4-diazabicyclo[2.2.2]octane (HDABCO(+)) were introduced into an electrically conducting 7,7,8,8-tetracyano-p-quinodimethane (TCNQ) salt as the countercation structure. Room-temperature electrical conductivity was approximately 10(-)(3) S cm(-)(1), with a semiconductive behavior. The temperature-dependent dielectric constants of (HDABCO(+))(2)(TCNQ)(3) indicated a dielectric transition at 306 K. A large deuterium isotope effect for the dielectric transition (DeltaT = 70 K) was observed for the deuterated salt, (DDABCO(+))(2)(TCNQ)(3). Thermally activated order/disorder of the protons or deuteriums within the one-dimensional hydrogen-bonding chains of (HDABCO(+))( infinity ) and (DDABCO(+))( infinity ) affected the dielectric responses in the TCNQ-based semiconductors.
将单质子化的1,4 - 二氮杂双环[2.2.2]辛烷（HDABCO(+)）的一维介电（N.H.N）（无穷）氢键链引入到作为抗衡阳离子结构的导电7,7,8,8 - 四氰基对苯二醌二甲烷（TCNQ）盐中。室温电导率约为10^(-3) S cm^(-1)，呈现半导体行为。(HDABCO(+))(2)(TCNQ)(3)的温度依赖性介电常数表明在306 K处有介电转变。对于氘代盐(DDABCO(+))(2)(TCNQ)(3)，观察到介电转变存在大的氘同位素效应（ΔT = 70 K）。(HDABCO(+))(无穷)和(DDABCO(+))(无穷)的一维氢键链内质子或氘的热激活有序/无序影响了基于TCNQ的半导体中的介电响应。
