Kaplan Bernard, Novikova Tatiana, De Martino Antonello, Drévillon Bernard
Laboratoire de Physique des Interfaces et des Couches Minces, UMR 7647, Centre National de la Recherche Scientifique, Ecole polytechnique, 91128 Palaiseau, France.
Appl Opt. 2004 Feb 20;43(6):1233-40. doi: 10.1364/ao.43.001233.
We studied two bidimensional square gratings of square holes formed in photoresist layers deposited on silicon wafers, both by classical spectroscopic ellipsometry (1.5-4.5-eV spectral range) at a constant incidence angle (70.7 degrees) and by angle-resolved Mueller polarimetry at a constant wavelength (532 nm). The grating period was 1 microm in both directions, and the nominal hole sizes were 250 and 500 nm, respectively. The ellipsometric spectra were fitted by rigorous coupled-wave analysis simulations with two adjustable parameters, the resist layer thickness and the hole size. These parameters were found to be in good agreement with independent scanning electron microscopy measurements. The experimental angle-resolved Mueller spectra were remarkably well reproduced by the simulations, showing that angle-resolved Mueller polarimetry has a great potential for grating metrology applications.
我们研究了在硅片上沉积的光刻胶层中形成的两种方形孔的二维方形光栅，一种是通过经典光谱椭偏仪在恒定入射角（70.7度）下在1.5 - 4.5电子伏特光谱范围内进行研究，另一种是通过在恒定波长（532纳米）下的角分辨穆勒偏振测量法进行研究。两个方向上的光栅周期均为1微米，标称孔尺寸分别为250纳米和500纳米。通过具有两个可调参数（光刻胶层厚度和孔尺寸）的严格耦合波分析模拟来拟合椭偏光谱。发现这些参数与独立的扫描电子显微镜测量结果吻合良好。模拟结果非常出色地再现了实验角度分辨穆勒光谱，表明角度分辨穆勒偏振测量法在光栅计量应用方面具有巨大潜力。
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