Kuan Wen Hui, Lo Shang Lien, Wang Ming Kuang
Department of Environmental and Safety Engineering, Ming-Chi Institute of Technology, 84, Gunjuan Rd., Taishan, Taipei Hsien 243, Taiwan.
J Colloid Interface Sci. 2004 Apr 15;272(2):489-97. doi: 10.1016/j.jcis.2003.12.034.
Reactions of Al(III) at the interface between SiO2(s) and aqueous solution were characteristically and quantitatively studied using electrophoretic methods and applying a surface complexation/precipitation model (SCM/SPM). The surface and bulk properties of Al(III)/SiO2 suspensions were determined as functions of pH and initial Al(III) concentration. Simulated modeling results indicate that the SCM, accounting for the adsorption mechanism, predicts sorption data for low surface coverage only reasonably well. Al(III) hydrolysis and surface hydroxide precipitation must be invoked as the Al(III) concentration and/or pH progressively increase. Accordingly, the three processes in the Al(III) sorption continuum, from adsorption through hydrolysis to surface precipitation, could be identified by the divergence between the SCM/SPM predictions and the experimental data. SiO2(s) suspensions with low Al(III) concentrations (1 x 10(-4) and 1 x 10(-5) M) exhibit electrophoretic behavior similar to that of a pure SiO2(s) system. In Al(III)/SiO2 systems with high Al concentrations of 1 x 10(-3), 5 x 10(-3) and 1 x 10(-2) M, three charge reversals (CR) are observed, separately representing, in order of increasing pH, the point of zero charge (PZC) on the SiO2 substrate (CR1), the onset of the surface precipitation of Al hydroxide (CR2), and at a high pH, the PZC of the Al(OH)3 coating (CR3). Furthermore, in the 1 x 10(-3) M Al(III)/SiO2(s) system, CR2 is consistent with the modeling results of SCM/SPM and provides evidence that Al(III) forms a surface precipitate on SiO2(s) at pH above 4. SiO2(s) dissolution was slightly inhibited when Al(III) was adsorbed onto the surface of SiO2(s), as compared to the dissolution that occurs in a pure SiO2(s) suspension system. Al hydroxide surface precipitation dramatically reduced the dissolution of SiO2(s) because the Al hydroxide passive film inhibited the corrosion of the SiO2(s) surface by OH- ions.
采用电泳方法并应用表面络合/沉淀模型(SCM/SPM),对Al(III)在SiO2(s)与水溶液界面处的反应进行了特征性和定量研究。测定了Al(III)/SiO2悬浮液的表面和整体性质与pH值和初始Al(III)浓度的函数关系。模拟建模结果表明,考虑吸附机制的SCM仅能较好地预测低表面覆盖率下的吸附数据。随着Al(III)浓度和/或pH值逐渐升高,必须考虑Al(III)水解和表面氢氧化物沉淀。因此,通过SCM/SPM预测值与实验数据之间的差异,可以确定Al(III)吸附连续过程中的三个过程,即从吸附到水解再到表面沉淀。低Al(III)浓度(1×10(-4)和1×10(-5) M)的SiO2(s)悬浮液表现出与纯SiO2(s)体系相似的电泳行为。在Al浓度为高浓度1×10(-3)、5×10(-3)和1×10(-2) M的Al(III)/SiO2体系中,观察到三次电荷反转(CR),按pH值升高顺序分别代表SiO2基底上的零电荷点(PZC)(CR1)、Al氢氧化物表面沉淀的起始点(CR2),以及在高pH值下Al(OH)3涂层的PZC(CR3)。此外,在1×10(-3) M Al(III)/SiO2(s)体系中,CR2与SCM/SPM的建模结果一致,并提供了证据表明Al(III)在pH值高于4时在SiO2(s)上形成表面沉淀。与纯SiO2(s)悬浮体系中的溶解情况相比,当Al(III)吸附到SiO2(s)表面时,SiO2(s)的溶解略有抑制。Al氢氧化物表面沉淀显著降低了SiO2(s)的溶解,因为Al氢氧化物钝化膜抑制了OH-离子对SiO2(s)表面的腐蚀。