通过俄歇电子能谱（AES）和因子分析对TiC/C和Ti(C,N)层进行表面和深度表征。
Surface and in-depth characterization of TiC/C and Ti(C,N) layers by means of AES and Factor Analysis.
作者信息
John A
机构信息
Institut für Festkörper- und Werkstofforschung Dresden, Postfach 27 00 16, D-01171, Dresden, Germany.
出版信息
Anal Bioanal Chem. 1995 Oct;353(3-4):468-72. doi: 10.1007/s0021653530468.
Magnetron sputtered TiC/C multilayers and Plasma Vapour Deposited Ti(C,N) layers have been investigated by AES. The carbon sensivity factor has been calibrated for the correct composition of a TiC standard sample. Nitrogen has been measured indirectly based on the Ti(L3M23M23)/Ti(L3M23V) peak area ratio in the direct E.N(E) spectrum using Ti, TiC and TiN standard samples. The influence of Tougaard background removal has been tested. As the less accurate method taking the Ti peak-to-peak ratio has been found to give adequately good results. It has been possible to recalculate AES depth profiles, where only peak-to-peak values and no peak areas in the direct spectrum are available. Factor Analysis has been applied to AES depth profiling results. The data matrix in each column contains the linked experimental spectra of the measured elements. Based on the standard spectra the main components of a TiN layer on silicon have been identified by Factor Analysis. The structure of a TiC/C multilayer system has been resolved by the characteristic C(KLL) peak shape in C and TiC. Factor Analysis enables to calculate the individual profiles for Ti, TiC and C.
利用俄歇电子能谱（AES）对磁控溅射TiC/C多层膜和等离子体气相沉积Ti(C,N)层进行了研究。已针对TiC标准样品的正确成分校准了碳灵敏度因子。使用Ti、TiC和TiN标准样品，基于直接E.N(E)谱中Ti(L3M23M23)/Ti(L3M23V)峰面积比间接测量氮。测试了图gaard背景扣除的影响。由于发现采用Ti峰峰值比这种不太精确的方法能给出足够好的结果。对于直接谱中只有峰峰值而没有峰面积的情况，有可能重新计算AES深度剖析图。因子分析已应用于AES深度剖析结果。每列中的数据矩阵包含所测元素的关联实验谱。基于标准谱，通过因子分析确定了硅上TiN层的主要成分。通过C和TiC中特征性的C(KLL)峰形状解析了TiC/C多层膜系统的结构。因子分析能够计算Ti、TiC和C的单独剖析图。
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