Rutenberg Isaac M, Scherman Oren A, Grubbs Robert H, Jiang Weirong, Garfunkel Eric, Bao Zhenan
California Institute of Technology, Pasadena, California, USA.
J Am Chem Soc. 2004 Apr 7;126(13):4062-3. doi: 10.1021/ja035773c.
The use of surface-initiated ring-opening metathesis polymerization (SI-ROMP) for producing polymer dielectric layers is reported. Surface tethering of the catalyst to Au or Si/SiO2 surfaces is accomplished via self-assembled monolayers of thiols or silanes containing reactive olefins. Subsequent SI-ROMP of norbornene can be conducted under mild conditions. Pentacene semiconducting layers and gold drain/source electrodes are deposited over these polymer dielectric films. The resulting field effect transistors display promising device characteristics, demonstrating for the first time that SI-ROMP can be used in the construction of organic thin-film electronic devices.
据报道，表面引发的开环易位聚合反应（SI-ROMP）可用于制备聚合物介电层。通过含有反应性烯烃的硫醇或硅烷的自组装单分子层，可将催化剂表面连接到金或硅/二氧化硅表面。随后，降冰片烯的SI-ROMP可在温和条件下进行。并五苯半导体层和金漏极/源极电极沉积在这些聚合物介电膜上。所得场效应晶体管显示出良好的器件特性，首次证明SI-ROMP可用于构建有机薄膜电子器件。
