Castelfranco Ann M, Hartline Daniel K
Békésy Laboratory of Neurobiology, Pacific Biomedical Research Center, University of Hawaii at Manoa, 1993 East-West Road, Honolulu, HI 96822, USA.
Biol Cybern. 2004 Apr;90(4):280-90. doi: 10.1007/s00422-004-0465-7. Epub 2004 Mar 31.
The ability to correct parameters of voltage-gated conductances measured under poor spatial control by point voltage clamp could rescue much flawed experimental data. We explore a strategy for correcting errors in experiments that employs a full-trace approach to parameter determination. Simulated soma voltage-clamp runs are made on a model neuron with a single voltage-gated, Hodgkin-Huxley channel type distributed uniformly along an elongate process. Estimates for both kinetic and I(V) parameters are obtained by fitting a form of the Hodgkin-Huxley equations to the complete time course of leak-subtracted current curves. The fitted parameters are used to determine how much correction in each parameter is needed to regenerate the set actually belonging to the channel. Corrections are generated for a range of neurite lengths, conductance densities, and channel characteristics.
通过点电压钳在空间控制不佳的情况下测量电压门控电导参数的校正能力，可以挽救许多有缺陷的实验数据。我们探索了一种在实验中校正误差的策略，该策略采用全迹线方法来确定参数。在一个模型神经元上进行模拟的胞体电压钳实验，该神经元具有沿着细长突起均匀分布的单一电压门控霍奇金-赫胥黎通道类型。通过将霍奇金-赫胥黎方程的一种形式拟合到减去泄漏电流曲线的完整时间过程中，获得动力学参数和I(V)参数的估计值。拟合参数用于确定每个参数需要多少校正才能重新生成实际属于该通道的参数集。针对一系列神经突长度、电导密度和通道特性生成校正值。
