Petrik Nikolay G, Kimmel Greg A
Fundamental Science Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA.
J Chem Phys. 2004 Aug 22;121(8):3727-35. doi: 10.1063/1.1773151.
We have measured the electron-stimulated desorption (ESD) of D(2), O(2), and D(2)O, the electron-stimulated dissociation of D(2)O at the D(2)O/Pt interface, and the total electron-stimulated sputtering in thin D(2)O films adsorbed on Pt(111) as a function of the D(2)O coverage (i.e., film thickness). Qualitatively different behavior is observed above and below a threshold coverage of approximately 2 monolayers (ML). For coverages less than approximately 2 ML electron irradiation results in D(2)O ESD and some D(2) ESD, but no detectible reactions at the water/Pt interface and no O(2) ESD. For larger coverages, electron-stimulated reactions at the water/Pt interface occur, O(2) is produced and the total electron-stimulated sputtering of the film increases. An important step in the electron-stimulated reactions is the reaction between water ions (generated by the incident electrons) and electrons trapped in the water films to form dissociative neutral molecules. However, the electron trapping depends sensitively on the water coverage: For coverages less than approximately 2 ML, the electron trapping probability is low and the electrons trap preferentially at the water/vacuum interface. For larger coverages, the electron trapping increases and the electrons are trapped in the bulk of the film. We propose that the coverage dependence of the trapped electrons is responsible for the observed coverage dependence of the electron-stimulated reactions.
我们测量了D₂、O₂和D₂O的电子激发脱附(ESD)、D₂O在D₂O/Pt界面处的电子激发解离以及吸附在Pt(111)上的D₂O薄膜中的总电子激发溅射,这些都是作为D₂O覆盖度(即薄膜厚度)的函数。在约2个单层(ML)的阈值覆盖度上下观察到了定性不同的行为。对于小于约2 ML的覆盖度,电子辐照会导致D₂O的ESD和一些D₂的ESD,但在水/Pt界面没有可检测到的反应,也没有O₂的ESD。对于更大的覆盖度,水/Pt界面会发生电子激发反应,产生O₂,并且薄膜的总电子激发溅射增加。电子激发反应中的一个重要步骤是水离子(由入射电子产生)与捕获在水膜中的电子之间的反应,以形成解离中性分子。然而,电子捕获敏感地依赖于水的覆盖度:对于小于约2 ML的覆盖度,电子捕获概率较低,电子优先在水/真空界面处捕获。对于更大的覆盖度,电子捕获增加,电子被捕获在薄膜主体中。我们提出,捕获电子的覆盖度依赖性是观察到的电子激发反应的覆盖度依赖性的原因。