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通过醛反应探针(ARP)检测法检测γ射线照射的DNA和细胞中对核酸内切酶III和8-氧代鸟嘌呤糖基化酶敏感的碱基修饰。

Detection of endonuclease III- and 8-oxoguanine glycosylase-sensitive base modifications in gamma-irradiated DNA and cells by the aldehyde reactive probe (ARP) assay.

作者信息

Mohsin Ali Mohammed, Kurisu Satofumi, Yoshioka Yoshihiro, Terato Hiroaki, Ohyama Yoshihiko, Kubo Kihei, Ide Hiroshi

机构信息

Department of Mathematical and Life Sciences, Graduate School of Science, Hiroshima University, Higashi-Hiroshima, Japan.

出版信息

J Radiat Res. 2004 Jun;45(2):229-37. doi: 10.1269/jrr.45.229.

Abstract

Ionizing radiation generates diverse DNA lesions that differentially induce cell death and mutations. In the present study, calf thymus DNA (400 microg/ml) and HeLa cells were irradiated by (60)Co gamma-rays, and abasic (AP) sites and endonuclease (Endo)III- and 8-oxoguanine glycosylase (hOGG1)-sensitive base modifications in DNA were quantitated by the aldehyde reactive probe (ARP) assay. The irradiation of calf thymus DNA in phosphate buffer generated 91 Endo III- and 100 hOGG1-sensitive base modifications and 110 AP sites per 10(6) base pairs (bp) per Gy. The yield of the lesions in Tris buffer was 41- to 91-fold lower than that in phosphate, demonstrating a radioprotective effect of Tris. The HeLa cell chromosomal DNA contained 12 Endo III- and 3.8 hOGG1-sensitive base modifications and less than 1 AP sites per 10(6) bp as endogenous damage, and their level was increased by irradiation. The yields of the damage at 1 Gy (roughly equivalent to the lethal dose of HeLa cells [1.6-1.8 Gy]) were 0.13 Endo III, 0.091 hOGG1, and 0.065 AP sites per 10(6) bp, showing that irradiation with a lethal dose brought about only a marginal increase in base damage relative to an endogenous one. A comparison of the present data with those reported for DNA strand breaks supports the primary importance of double-strand breaks and clustered lesions as lethal damages formed by ionizing radiation.

摘要

电离辐射会产生多种DNA损伤,这些损伤会以不同方式诱导细胞死亡和突变。在本研究中,用钴-60γ射线照射小牛胸腺DNA(400微克/毫升)和HeLa细胞,通过醛反应探针(ARP)测定法定量DNA中的无碱基(AP)位点以及内切酶(Endo)III和8-氧代鸟嘌呤糖基化酶(hOGG1)敏感的碱基修饰。在磷酸盐缓冲液中照射小牛胸腺DNA,每戈瑞每10⁶碱基对(bp)产生91个Endo III敏感的碱基修饰、100个hOGG1敏感的碱基修饰和110个AP位点。在Tris缓冲液中这些损伤的产率比在磷酸盐缓冲液中低41至91倍,表明Tris具有辐射防护作用。HeLa细胞染色体DNA含有12个Endo III敏感的碱基修饰和3.8个hOGG1敏感的碱基修饰,每10⁶bp内源性损伤少于1个AP位点,照射后其水平升高。在1戈瑞(大致相当于HeLa细胞的致死剂量[1.6 - 1.8戈瑞])时,损伤产率为每10⁶bp 0.13个Endo III、0.091个hOGG1和0.065个AP位点,表明致死剂量照射相对于内源性损伤仅使碱基损伤略有增加。将本研究数据与报道的DNA链断裂数据进行比较,支持双链断裂和簇状损伤作为电离辐射形成的致死损伤的首要重要性。

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