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用于电子束放射治疗的n型二极管特性评估。

An assessment of the characteristics of n-type diodes for use in electron beam radiotherapy.

作者信息

Gibson Brian J, Langmack Keith A

机构信息

Medical Physics Department, Addenbrooke's NHS Trust, Cambridge, UK.

出版信息

Med Dosim. 2004 Fall;29(3):161-5. doi: 10.1016/j.meddos.2004.04.001.

Abstract

Diodes are now commercially available for use in electron beams. This paper aims to assess their response and limitations under different clinical conditions. Parameters considered were applicator factors, focus skin distance (FSD), angle of incidence, and temperature dependence. The beam perturbation was also measured. The beam energies used varied from 5 to 17 MeV. Applicator factors, measured at the surface of a phantom, differed by up to 7% compared with ion chamber measurements at Dmax. Similarly, large differences were found in FSD dependence. The temperature dependence was found to be approximately double the manufacturer's specification at 0.7% per degree Centigrade and the angular dependence was within the specification of +/- 2% for angles of +/- 30 degrees. The beam perturbation was measured as a maximum of 25% for 5-MeV electrons. The measurements were compared to other published data but this is highly dependent on the methodology employed. It was concluded that the diodes could be used in some circumstances, but only if used with extreme caution. An extensive set of commissioning measurements would be required before introducing the diodes into use clinically.

摘要

现在已有可用于电子束的商用二极管。本文旨在评估它们在不同临床条件下的响应和局限性。考虑的参数有施源器因素、焦皮距(FSD)、入射角和温度依赖性。还测量了束流扰动。使用的束流能量范围为5至17 MeV。在模体表面测量的施源器因素与在Dmax处用离子室测量的结果相比,差异高达7%。同样,在FSD依赖性方面也发现了很大差异。发现温度依赖性约为制造商规格的两倍,即每摄氏度0.7%,对于±30度的角度,角度依赖性在±2%的规格范围内。对于5 MeV电子,测量的束流扰动最大为25%。将测量结果与其他已发表的数据进行了比较,但这高度依赖于所采用的方法。得出的结论是,二极管在某些情况下可以使用,但必须极其谨慎。在临床使用二极管之前,需要进行大量的调试测量。

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