Mücke Oliver D, Tritschler Thorsten, Wegener Martin, Morgner Uwe, Kärtner Franz X, Khitrova Galina, Gibbs Hyatt M
Institut für Angewandte Physik, Universität Karlsruhe (TH), Wolfgang-Gaede-Strasse 1, 76131 Karlsruhe, Germany.
Opt Lett. 2004 Sep 15;29(18):2160-2. doi: 10.1364/ol.29.002160.
Recently, a dependence of Rabi flopping on the carrier-envelope phase of the exciting laser pulses was predicted theoretically [Phys. Rev. Lett. 89, 127401 (2002)] for excitation of a thin semiconductor film with intense few-cycle pulses. Here, we report corresponding experiments on 50-100-nm thin GaAs films excited with 5-fs pulses. We find a dependence on the carrier-envelope phase arising from the interference of sidebands from the fundamental or the third-harmonic Mollow triplet, respectively, with surface second-harmonic generation.
最近，理论上预测了拉比振荡对激发激光脉冲的载波包络相位的依赖性[《物理评论快报》89, 127401 (2002)]，用于用强少周期脉冲激发薄半导体薄膜。在此，我们报告了用5飞秒脉冲激发50 - 100纳米厚砷化镓薄膜的相应实验。我们发现，分别来自基频或三次谐波莫洛三重态的边带与表面二次谐波产生的干涉导致了对载波包络相位的依赖性。
