Yuliarto Brian, Zhou Haoshen, Yamada Takeo, Honma Itaru, Katsumura Yosuke, Ichihara Masaki
Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan.
Anal Chem. 2004 Nov 15;76(22):6719-26. doi: 10.1021/ac0495642.
Self-ordered and structure-controlled transparent films of tin-modified mesoporous silica (Sn/Si ratio of 0.5-3%) were first prepared using a molecule surfactant template method employing spin coating. A surface photovoltage (SPV) NO(2) gas sensor was then fabricated using these self-ordered tin-modified mesoporous silica thin films based on a metal-insulator-semiconductor structure. Highly sensitive tin-modified mesoporous silica was obtained that could detect NO(2) gas concentrations of as low as 300 ppb at room temperature. The detection mechanism for NO(2) is believed to involve both the surface area, which contributes to the change in dielectric constant, and the amount of tin incorporated, which contributes to the change in charge. It was found that, in this SPV sensor, the optimal Sn/Si ratio of 0.5% delivered record-high sensing performance.
首先采用分子表面活性剂模板法并通过旋涂制备了锡改性介孔二氧化硅的自组装且结构可控的透明薄膜（锡/硅比例为0.5 - 3%）。然后基于金属 - 绝缘体 - 半导体结构，使用这些自组装的锡改性介孔二氧化硅薄膜制作了表面光电压（SPV）NO₂气体传感器。获得了高灵敏度的锡改性介孔二氧化硅，其在室温下能够检测低至300 ppb的NO₂气体浓度。据信，NO₂的检测机制既涉及导致介电常数变化的表面积，也涉及导致电荷变化的锡掺入量。结果发现，在这种SPV传感器中，0.5%的最佳锡/硅比例提供了创纪录的高传感性能。
