Johansson J, Korenivski V, Haviland D B, Brataas Arne
Nanostructure Physics, Royal Institute of Technology, AlbaNova University Center, 10691 Stockholm, Sweden.
Phys Rev Lett. 2004 Nov 19;93(21):216805. doi: 10.1103/PhysRevLett.93.216805.
Spin dependent transport in a ferromagnet-superconductor single-electron transistor is studied theoretically taking into account spin accumulation, spin relaxation, gap suppression, and charging effects. A strong dependence of the gap on the magnetic state of the electrodes is found, which gives rise to a magnetoresistance of up to 100%. We predict that fluctuations of the spin accumulation can play such an important role as to cause the island to fluctuate between the superconducting and normal states. Furthermore, the device exhibits a nearly complete gate-controlled spin-valve effect.
考虑到自旋积累、自旋弛豫、能隙抑制和充电效应，从理论上研究了铁磁体 - 超导体单电子晶体管中的自旋相关输运。发现能隙对电极的磁状态有强烈依赖性，这导致高达100%的磁电阻。我们预测自旋积累的涨落会起到如此重要的作用，以至于使岛在超导态和正常态之间波动。此外，该器件表现出近乎完全的栅极控制自旋阀效应。
