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十八烷基硅氧烷单分子层的分子聚集态对制备方法的依赖性。

Dependence of the molecular aggregation state of octadecylsiloxane monolayers on preparation methods.

作者信息

Koga Tomoyuki, Morita Masamichi, Ishida Hideomi, Yakabe Hirohiko, Sasaki Sono, Sakata Osami, Otsuka Hideyuki, Takahara Atsushi

机构信息

Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan.

出版信息

Langmuir. 2005 Feb 1;21(3):905-10. doi: 10.1021/la048544s.

Abstract

The molecular aggregation state of octadecylsiloxane monolayers on Si-wafer substrate surfaces prepared from octadecyltrimethoxysilane (OTMS) or octadecyltrichlorosilane (OTS) was investigated on the basis of grazing incidence X-ray diffraction (GIXD), Fourier transform infrared spectroscopy (FT-IR), contact angle measurement, field emission scanning electron microscopy (FE-SEM), and scanning force microscopy (SFM). The OTMS monolayer was prepared by using the chemical vapor adsorption (CVA) method, and the OTS monolayers, which were used as reference samples, were prepared either by chemisorption (OTS-S) or by the water-cast method (OTS-W). The GIXD, FT-IR, lateral force microscopic (LFM) measurements, and FE-SEM observation revealed that the alkyl chains in the OTMS monolayers prepared using the CVA method are in an amorphous state at room temperature. According to the LFM measurement, the transition temperature from the hexagonal crystalline phase to the amorphous phase was found to be ca. 333 K for the OTS-S monolayer prepared by the chemisorption method. However, the phase transition was not observed in the OTMS monolayer prepared by the CVA method. Also, the atomic force microscopic (AFM) observation and the contact angle measurement showed that the OTMS monolayer prepared by the CVA method has a uniform surface when compared to the OTS monolayers. These results indicated that organosilane compounds in the monolayer prepared by the CVA method were immobilized on the Si-wafer substrate surface in an amorphous state, which was quite different from the hexagonal crystalline state obtained by the chemisorption and water-cast methods.

摘要

基于掠入射X射线衍射(GIXD)、傅里叶变换红外光谱(FT-IR)、接触角测量、场发射扫描电子显微镜(FE-SEM)和扫描力显微镜(SFM),研究了由十八烷基三甲氧基硅烷(OTMS)或十八烷基三氯硅烷(OTS)制备的硅片基底表面上十八烷基硅氧烷单层的分子聚集状态。OTMS单层通过化学气相吸附(CVA)法制备,用作参考样品的OTS单层则通过化学吸附(OTS-S)或水铸法(OTS-W)制备。GIXD、FT-IR、侧向力显微镜(LFM)测量以及FE-SEM观察表明,使用CVA法制备的OTMS单层中的烷基链在室温下处于无定形状态。根据LFM测量,发现通过化学吸附法制备的OTS-S单层从六方晶相到无定形相的转变温度约为333K。然而,在通过CVA法制备的OTMS单层中未观察到相变。此外,原子力显微镜(AFM)观察和接触角测量表明,与OTS单层相比,通过CVA法制备的OTMS单层具有均匀的表面。这些结果表明,通过CVA法制备的单层中的有机硅烷化合物以无定形状态固定在硅片基底表面,这与通过化学吸附和水铸法获得的六方晶态有很大不同。

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