用于有机场效应晶体管的烷基硅烷晶体超光滑自组装单分子层。

Crystalline ultrasmooth self-assembled monolayers of alkylsilanes for organic field-effect transistors.

作者信息

Ito Yutaka, Virkar Ajay A, Mannsfeld Stefan, Oh Joon Hak, Toney Michael, Locklin Jason, Bao Zhenan

机构信息

Department of Chemical Engineering, Stanford University, 381 North South Mall, Stanford, California 94305, USA.

出版信息

J Am Chem Soc. 2009 Jul 8;131(26):9396-404. doi: 10.1021/ja9029957.

DOI:10.1021/ja9029957

PMID:19518097

Abstract

Crystalline self-assembled monolayers (SAMs) of organosilane compounds such as octadecyltrimethoxysilane (OTMS) and octadecyltrichlorosilane (OTCS) were deposited by a simple, spin-casting technique onto Si/SiO(2) substrates. Fabrication of the OTMS SAMs and characterization using ellipsometry, contact angle, atomic force microscopy (AFM), grazing angle attenuated total reflectance Fourier transform infrared (GATR-FTIR) spectroscopy and grazing incidence X-ray diffraction (GIXD) are described. The characterization confirms that these monolayers exhibit a well-packed crystalline phase and a remarkably high degree of smoothness. Semiconductors deposited by vapor deposition onto the crystalline OTS SAM grow in a favorable two-dimensional layered growth manner which is generally preferred morphologically for high charge carrier transport. On the OTMS SAM treated dielectric, pentacene OFETs showed hole mobilities as high as 3.0 cm(2)/V x s, while electron mobilities as high as 5.3 cm(2)/V x s were demonstrated for C(60).

摘要

通过简单的旋涂技术，将十八烷基三甲氧基硅烷（OTMS）和十八烷基三氯硅烷（OTCS）等有机硅烷化合物的晶体自组装单分子层（SAMs）沉积在Si/SiO₂ 衬底上。描述了OTMS SAMs的制备过程以及使用椭偏仪、接触角测量、原子力显微镜（AFM）、掠角衰减全反射傅里叶变换红外（GATR-FTIR）光谱和掠入射X射线衍射（GIXD）进行的表征。表征证实这些单分子层呈现出排列紧密的晶相和非常高的光滑度。通过气相沉积在结晶OTS SAM上沉积的半导体以有利的二维层状生长方式生长，这种形态通常有利于高电荷载流子传输。在经OTMS SAM处理的电介质上，并五苯有机场效应晶体管（OFET）的空穴迁移率高达3.0 cm²/V·s，而对于C₆₀，电子迁移率高达5.3 cm²/V·s。