Piazolo S, Prior D J, Holness M D
Department of Earth and Ocean Sciences, University of Liverpool, Brownlow Hill 4, Liverpool L69 3GP, UK.
J Microsc. 2005 Feb;217(Pt 2):152-61. doi: 10.1111/j.1365-2818.2005.01423.x.
Grain boundary migration is an important mechanism of microstructural modification both in rocks and in metals. Combining detailed cathodoluminescence (CL) and electron backscatter diffraction (EBSD) analysis offers the opportunity to relate directly changes in crystallographic orientation to migrating boundaries. We observe the following features in naturally heated quartz grains from the thermal aureole of the Ballachulish Igneous Complex (Scotland, U.K.): (a) propagation of substructures and twin boundaries in swept areas both parallel and at an angle to the growth direction, (b) development of slightly different crystallographic orientations and new twin boundaries at both the growth interfaces and within the swept area and (c) a gradual change in crystallographic orientation in the direction of growth. All these features are compatible with a growth mechanism in which single atoms are attached and detached both at random and at preferential sites, i.e. crystallographically controlled sites or kinks in boundary ledges. Additionally, strain fields caused by defects and/or trace element incorporation may facilitate nucleation sites for new crystallographic orientations at distinct growth interfaces but also at continuously migrating boundaries. This study illustrates the usefulness of combined CL and EBSD in microprocess analysis. Further work in this direction may provide detailed insight into both the mechanism of static grain growth and the energies and mobilities of boundaries in terms of misorientation and grain boundary plane orientation.
晶界迁移是岩石和金属中微观结构改性的重要机制。结合详细的阴极发光(CL)和电子背散射衍射(EBSD)分析,有机会将晶体取向的变化与迁移边界直接联系起来。我们在英国苏格兰巴拉库利什火成杂岩体热晕圈中天然加热的石英颗粒中观察到以下特征:(a)在与生长方向平行和成一定角度的扫掠区域中,亚结构和孪晶界的传播;(b)在生长界面和扫掠区域内,晶体取向略有不同且出现新的孪晶界;(c)晶体取向在生长方向上逐渐变化。所有这些特征都与一种生长机制相符,即在随机和优先位点(即晶体学控制位点或边界台阶中的扭折)处单个原子的附着和脱离。此外,由缺陷和/或微量元素掺入引起的应变场可能促进在不同生长界面以及连续迁移边界处新晶体取向的形核位点。本研究说明了CL和EBSD联合在微过程分析中的有用性。在这个方向上的进一步工作可能会提供关于静态晶粒生长机制以及晶界在取向差和晶界平面取向方面的能量和迁移率的详细见解。