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电沉积Co-Ni薄膜中三叉晶界与柱状晶粒关系的三维电子背散射衍射研究

Three-dimensional EBSD study on the relationship between triple junctions and columnar grains in electrodeposited Co-Ni films.

作者信息

Bastos A, Zaefferer S, Raabe D

机构信息

Max-Planck-Institut für Eisenforschung, Max-Planck-Str. 1, D-40237, Düsseldorf, Germany.

出版信息

J Microsc. 2008 Jun;230(Pt 3):487-98. doi: 10.1111/j.1365-2818.2008.02008.x.

DOI:10.1111/j.1365-2818.2008.02008.x
PMID:18503675
Abstract

Electrodeposited nanocrystalline materials are expected to have a homogeneous grain size and a narrow grain size distribution. In Co-Ni electrodeposited films, however, under certain conditions an undesired columnar grain structure is formed. Fully automated three-dimensional (3D) orientation microscopy, consisting of a combination of precise material removal by focussed ion beam and subsequent electron backscatter diffraction (EBSD) analysis, was applied to fully characterize the grain boundaries of these columnar grains in order to gain further understanding on their formation mechanisms. Two-dimensional orientation microscopy on these films indicated that the development of columnar grains could be related to the formation of low-energy triple junctions. 3D EBSD allowed us to verify this suggestion and to determine the boundary planes of these triples. The triplets are formed by grain boundaries of different quality, a coherent twin on the {1011} plane, an incoherent twin and a large-angle grain boundary. These three boundaries are related to each other by a rotation about the <1120> direction. A second particularity of the columnar grains is the occurrence of characteristic orientation gradients created by regular defects in the grain. Transmission electron microscopy was applied to investigate the character of the defects. For this purpose, a sample was prepared with the focussed ion beam from the last slice of the 3D EBSD investigation. From the TEM and 3D EBSD observations, a growth mechanism of the columnar grains is proposed.

摘要

人们期望电沉积纳米晶材料具有均匀的晶粒尺寸和狭窄的晶粒尺寸分布。然而,在钴 - 镍电沉积薄膜中,在某些条件下会形成不理想的柱状晶粒结构。由聚焦离子束精确去除材料并随后进行电子背散射衍射(EBSD)分析相结合组成的全自动三维(3D)取向显微镜,被用于全面表征这些柱状晶粒的晶界,以便进一步了解它们的形成机制。对这些薄膜进行的二维取向显微镜观察表明,柱状晶粒的形成可能与低能三重结的形成有关。3D EBSD使我们能够验证这一推测并确定这些三重结的边界平面。这些三重结由不同质量的晶界形成,{1011}面上的相干孪晶、非相干孪晶和大角度晶界。这三个边界通过绕<1120>方向的旋转相互关联。柱状晶粒的另一个特点是晶粒中规则缺陷产生的特征取向梯度的出现。应用透射电子显微镜来研究缺陷的性质。为此,用聚焦离子束从3D EBSD研究的最后一片制备了一个样品。根据透射电子显微镜和3D EBSD的观察结果,提出了柱状晶粒的生长机制。

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