Eguchi T, Fujikawa Y, Akiyama K, An T, Ono M, Hashimoto T, Morikawa Y, Terakura K, Sakurai T, Lagally M G, Hasegawa Y
The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwa-no-ha, Kashiwa, 277-8581, Japan.
Phys Rev Lett. 2004 Dec 31;93(26 Pt 1):266102. doi: 10.1103/PhysRevLett.93.266102. Epub 2004 Dec 20.
High-resolution noncontact atomic force microscope (AFM) images were successfully taken on the Ge105-(1 x 2) structure formed on the Si105 substrate and revealed all dangling bonds of the surface regardless of their electronic situation, surpassing scanning tunneling microscopy, whose images strongly deviated from the atomic structure by the electronic states involved. An atomically resolved electrostatic potential profile by a Kelvin-probe method with AFM shows potential variations among the dangling bond states, directly observing a charge transfer between them. These results clearly demonstrate that high-resolution noncontact AFM with a Kelvin-probe method is an ideal tool for analysis of atomic structures and electronic properties of surfaces.
在硅105衬底上形成的锗105-(1×2)结构上成功拍摄了高分辨率非接触原子力显微镜（AFM）图像，该图像揭示了表面所有悬空键，无论其电子状态如何，超越了扫描隧道显微镜，后者的图像因所涉及的电子态而与原子结构有很大偏差。通过带有开尔文探针方法的AFM得到的原子分辨静电势分布图显示了悬空键态之间的电势变化，直接观察到了它们之间的电荷转移。这些结果清楚地表明，带有开尔文探针方法的高分辨率非接触AFM是分析表面原子结构和电子性质的理想工具。
