Suppr超能文献

碳纳米管器件中电荷传输势垒的光电流成像

Photocurrent imaging of charge transport barriers in carbon nanotube devices.

作者信息

Balasubramanian Kannan, Burghard Marko, Kern Klaus, Scolari Matteo, Mews Alf

机构信息

Max-Planck-Institut für Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany.

出版信息

Nano Lett. 2005 Mar;5(3):507-10. doi: 10.1021/nl050053k.

Abstract

The realization of high-performance electrical devices incorporating single-wall carbon nanotubes critically depends on the minimization of charge transport barriers in the tubes and at the contacts. Herein we demonstrate photocurrent imaging as a fast and effective tool to locate such barriers within individual metallic nanotubes contacted by metal electrodes. The locally induced photocurrents directly reflect the existence of built-in electric fields associated with the presence of depletion layers at the contacts or structural defects along the tubes.

摘要

包含单壁碳纳米管的高性能电子器件的实现关键取决于使管内和接触处的电荷传输势垒最小化。在此,我们展示了光电流成像作为一种快速有效的工具,用于在由金属电极接触的单个金属纳米管内定位此类势垒。局部感应的光电流直接反映了与接触处耗尽层的存在或沿管的结构缺陷相关的内建电场的存在。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验