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碳纳米管上的栅极定义量子点。

Gate-defined quantum dots on carbon nanotubes.

作者信息

Biercuk M J, Garaj S, Mason N, Chow J M, Marcus C M

机构信息

Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.

出版信息

Nano Lett. 2005 Jul;5(7):1267-71. doi: 10.1021/nl050364v.

Abstract

We report the realization of nanotube-based multiple quantum dots that are fully defined and controlled with electrostatic gates. Metallic top-gates are used to produce localized depletion regions in the underlying tubes; a pair of such depletion regions in a nanotube with ohmic contact electrodes defines the quantum dot. Top-gate voltages tune the transparencies of tunnel barriers as well as the electrostatic energies within single and multiple dots. This approach allows precise control over multiple devices on a single tube, and serves as a design paradigm for nanotube-based electronics and quantum systems.

摘要

我们报道了基于纳米管的多量子点的实现,这些量子点通过静电门完全定义和控制。金属顶栅用于在下面的纳米管中产生局部耗尽区;在具有欧姆接触电极的纳米管中的一对这样的耗尽区定义了量子点。顶栅电压调节隧道势垒的透明度以及单个和多个量子点内的静电能。这种方法允许对单个纳米管上的多个器件进行精确控制,并作为基于纳米管的电子学和量子系统的设计范例。

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