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用于太阳能制氢的Zn1-xCo(x)O薄膜的自动化电化学合成及光电化学表征

Automated electrochemical synthesis and photoelectrochemical characterization of Zn1-xCo(x)O thin films for solar hydrogen production.

作者信息

Jaramillo Thomas F, Baeck Sung-Hyeon, Kleiman-Shwarsctein Alan, Choi Kyoung-Shin, Stucky Galen D, McFarland Eric W

机构信息

Department of Chemical Engineering, University of California, Santa Barbara, California 93106-5080, USA.

出版信息

J Comb Chem. 2005 Mar-Apr;7(2):264-71. doi: 10.1021/cc049864x.

Abstract

High-throughput electrochemical methods have been developed for the investigation of Zn1-xCo(x)O films for photoelectrochemical hydrogen production from water. A library of 120 samples containing 27 different compositions (0 <or= x <or= 0.068) was synthesized by automated serial electrochemical deposition. High-throughput photoelectrochemical screening revealed improved solar hydrogen production for the cobalt-doped films, with Zn0.956Co0.044O exhibiting a 4-fold improvement over pure ZnO with no external bias. Flat-band potential, bias-dependent photocurrent, and action spectra were also measured automatically with the high-throughput screening system. The 200-nm-thick films were subsequently characterized by numerous techniques, including SEM, XRD, XPS, and UV-vis, which show that the depositions are well-controlled. Zn/Co stoichiometry in the films was controlled by the ratio of the Zn and Co precursors in each deposition bath. All films exhibited the wurtzite structure typical of pure ZnO, and the Co2+ appears to substitute Zn2+, forming a single-phase solid solution. Band gaps of the solid solutions were systematically lower than the 3.2-eV band gap typical of ZnO.

摘要

已经开发出高通量电化学方法来研究用于从水中进行光电化学制氢的Zn1-xCo(x)O薄膜。通过自动连续电化学沉积合成了一个包含120个样品的库,其中含有27种不同的成分(0≤x≤0.068)。高通量光电化学筛选显示,钴掺杂薄膜的太阳能制氢性能有所改善,在无外部偏压的情况下,Zn0.956Co0.044O的性能比纯ZnO提高了4倍。还使用高通量筛选系统自动测量了平带电位、偏压依赖的光电流和作用光谱。随后通过多种技术对200纳米厚的薄膜进行了表征,包括扫描电子显微镜(SEM)、X射线衍射(XRD)、X射线光电子能谱(XPS)和紫外可见光谱(UV-vis),结果表明沉积过程得到了很好的控制。薄膜中的锌/钴化学计量比由每个沉积浴中锌和钴前驱体的比例控制。所有薄膜均呈现出纯ZnO典型的纤锌矿结构,并且Co2+似乎取代了Zn2+,形成了单相固溶体。固溶体的带隙系统地低于ZnO典型的3.2电子伏特带隙。

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