Chair for MEMS Materials , Institute for Materials, Ruhr-Universität Bochum , 44801 Bochum , Germany.
Analytical Chemistry-Center for Electrochemical Sciences (CES) , Ruhr-Universität Bochum , 44801 Bochum , Germany.
ACS Comb Sci. 2018 Sep 10;20(9):544-553. doi: 10.1021/acscombsci.8b00030. Epub 2018 Aug 20.
The search for suitable materials for solar water splitting is addressed with combinatorial material science methods. Thin film Fe-V-O materials libraries were synthesized using combinatorial reactive magnetron cosputtering and subsequent annealing in air. The design of the libraries comprises a combination of large compositional gradients (from FeVO to FeVO ) and thickness gradients (from 140 to 425 nm). These material libraries were investigated by high-throughput characterization techniques in terms of composition, structure, optical, and photoelectrochemical properties to establish correlations between composition, thickness, crystallinity, microstructure, and photocurrent density. Results show the presence of the FeVO phase from ∼11 to 42 at. % Fe (toward low-Fe region) and the FeVO phase from ∼37 to 79 at. % Fe (toward Fe-rich region). However, as a third phase, FeO is present throughout the compositional gradients (from low-Fe to Fe-rich region). Material compositions with increasing crystallinity of the FeVO phase show enhanced photocurrent densities (∼160 to 190 μA/cm) throughout the thickness gradients whereas compositions with the FeVO phase show comparatively low photocurrent densities (∼28 μA/cm). The band gap energies of Fe-V-O films were inferred from Tauc plots. The highest photocurrent density of ∼190 μA/cm was obtained for films with ∼54 to 66 at. % Fe for the FeVO phase with ∼2.04 eV for the indirect and ∼2.80 eV for the direct band gap energies.
通过组合材料科学方法来寻找适合太阳能水分解的材料。使用组合反应磁控共溅射和随后在空气中退火的方法合成了薄膜 Fe-V-O 材料库。库的设计包括大的组成梯度(从 FeVO 到 FeVO )和厚度梯度(从 140nm 到 425nm)的组合。通过高通量特性测试技术研究了这些材料库,包括组成、结构、光学和光电化学性能,以建立组成、厚度、结晶度、微观结构和光电流密度之间的相关性。结果表明,存在 FeVO 相(从 ∼11 到 42 at.% Fe,朝向低-Fe 区)和 FeVO 相(从 ∼37 到 79 at.% Fe,朝向富 Fe 区)。然而,作为第三相,FeO 存在于整个组成梯度(从低-Fe 到富 Fe 区)中。随着 FeVO 相结晶度的增加,材料组成表现出增强的光电流密度(从 ∼160 到 190 μA/cm),而具有 FeVO 相的组成则表现出相对较低的光电流密度(从 ∼28 μA/cm)。从 Tauc 图推断出 Fe-V-O 薄膜的能带隙能量。具有 ∼54 到 66 at.% Fe 的 FeVO 相和约 2.04 eV 的间接能带隙和约 2.80 eV 的直接能带隙的薄膜获得了最大的光电流密度 ∼190 μA/cm。