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在重入绝缘相且靠近ν = 1时相互作用的砷化镓双层空穴系统的热电势

Thermopower of interacting GaAs bilayer hole systems in the reentrant insulating phase near nu=1.

作者信息

Faniel S, Tutuc E, De Poortere E P, Gustin C, Vlad A, Melinte S, Shayegan M, Bayot V

机构信息

Cermin, PCPM and DICE Labs, Université Catholique de Louvain, 1348 Louvain-la-Neuve, Belgium.

出版信息

Phys Rev Lett. 2005 Feb 4;94(4):046802. doi: 10.1103/PhysRevLett.94.046802. Epub 2005 Feb 2.

Abstract

We report thermopower measurements of interacting GaAs bilayer hole systems. When the carrier densities in the two layers are equal, these systems exhibit a reentrant insulating phase near the quantum Hall state at total filling factor nu=1. Our data show that, as the temperature is decreased, the thermopower diverges in the insulating phase. This behavior indicates the opening of an energy gap at low temperature, consistent with the formation of a pinned Wigner solid. We extract an energy gap and a Wigner solid melting phase diagram.

摘要

我们报告了相互作用的砷化镓双层空穴系统的热电功率测量结果。当两层中的载流子密度相等时,这些系统在总填充因子ν = 1 时,在量子霍尔态附近呈现出再入绝缘相。我们的数据表明,随着温度降低,绝缘相中的热电功率发散。这种行为表明在低温下能隙的打开,这与钉扎维格纳固体的形成一致。我们提取了一个能隙和一个维格纳固体熔化相图。

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