Tutuc E, Shayegan M, Huse D A
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Phys Rev Lett. 2004 Jul 16;93(3):036802. doi: 10.1103/PhysRevLett.93.036802. Epub 2004 Jul 12.
We study interacting GaAs bilayer hole systems, with very small interlayer tunneling, in a counterflow geometry where equal currents are passed in opposite directions in the two, independently contacted layers. At low temperatures, both the longitudinal and Hall counterflow resistances tend to vanish in the quantum Hall state at total bilayer filling nu=1, demonstrating the pairing of oppositely charged carriers in opposite layers. The counterflow Hall resistance decreases much more strongly than the longitudinal resistances as the temperature is reduced.
我们研究了具有非常小的层间隧穿的相互作用砷化镓双层空穴系统，该系统处于逆流几何结构中，在两个独立接触的层中以相反方向通过相等的电流。在低温下，当总双层填充数ν = 1时，纵向和霍尔逆流电阻在量子霍尔态中都趋于消失，这表明相反层中带相反电荷的载流子发生了配对。随着温度降低，逆流霍尔电阻比纵向电阻下降得更为强烈。
