Watson David F, Meyer Gerald J
Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, New York 14260-3000, USA.
Annu Rev Phys Chem. 2005;56:119-56. doi: 10.1146/annurev.physchem.56.092503.141142.
Electron injection at dye-sensitized semiconductors is reviewed. Particular emphasis is placed on theoretical and photoelectrochemical studies of dye-sensitized planar and single-crystal electrodes. The accepted mechanism of electron injection, which was derived from these classical studies, is introduced. Selected photoelectrochemical studies of dye-sensitized nanocrystalline semiconductors are reviewed; emphasis is given to factors that influence the efficiencies of electron injection and charge recombination. The development of quasi-solid-state nanocrystalline dye-sensitized solar cells is also discussed. Recent time-resolved spectroscopic studies of electron injection and charge recombination are reviewed. These studies have led to a better understanding of electron injection mechanisms, and have revealed the limitations of the classical models.
本文综述了染料敏化半导体中的电子注入过程。特别着重于染料敏化平面和单晶电极的理论及光电化学研究。文中介绍了源于这些经典研究的公认电子注入机制。回顾了染料敏化纳米晶半导体的部分光电化学研究;重点关注影响电子注入效率和电荷复合的因素。还讨论了准固态纳米晶染料敏化太阳能电池的发展。综述了近期关于电子注入和电荷复合的时间分辨光谱研究。这些研究有助于更好地理解电子注入机制,并揭示了经典模型的局限性。