Braun P-F, Marie X, Lombez L, Urbaszek B, Amand T, Renucci P, Kalevich V K, Kavokin K V, Krebs O, Voisin P, Masumoto Y
LNMO, INSA 135 Avenue de Rangueil, 31077 Toulouse CEDEX 4, France.
Phys Rev Lett. 2005 Mar 25;94(11):116601. doi: 10.1103/PhysRevLett.94.116601. Epub 2005 Mar 23.
We have studied the electron spin relaxation in semiconductor InAs/GaAs quantum dots by time-resolved optical spectroscopy. The average spin polarization of the electrons in an ensemble of p-doped quantum dots decays down to 1/3 of its initial value with a characteristic time T(Delta) approximately 500 ps, which is attributed to the hyperfine interaction with randomly oriented nuclear spins. We show that this efficient electron spin relaxation mechanism can be suppressed by an external magnetic field as small as 100 mT.
我们通过时间分辨光谱研究了半导体InAs/GaAs量子点中的电子自旋弛豫。p型掺杂量子点集合中电子的平均自旋极化率以约500 ps的特征时间T(Delta)衰减至其初始值的1/3,这归因于与随机取向核自旋的超精细相互作用。我们表明,这种有效的电子自旋弛豫机制可以被低至100 mT的外部磁场抑制。