Kokonou M, Nassiopoulou A G, Giannakopoulos K P, Boukos N, Travlos A
IMEL/NCSR Demokritos, PO BOX 60228, 153 10 Aghia Paraskevi, Athens, Greece.
J Nanosci Nanotechnol. 2005 Mar;5(3):454-8. doi: 10.1166/jnn.2005.064.
The formation of thin alumina films on a silicon substrate by anodization in a mild acid, specifically in 1% wt citric acid aqueous solution, is investigated by transmission electron microscopy (TEM). We present a comparative study between two cases of starting material: pure aluminum and an alloy of aluminum with 1% silicon. In both cases the thickness of the Al layer was less than 50 nm. It was observed that under exactly the same conditions, in the first case the anodization was stopping before anodizing the whole film and a remaining non-anodized Al layer was always present, while in the second case, the Al layer was fully anodized, resulting in an alumina matrix with a very high density of silicon nanocrystals of uniform sizes embedded in it. In both cases the alumina film was compact and amorphous.
通过透射电子显微镜（TEM）研究了在温和酸中，特别是在1%重量百分比的柠檬酸水溶液中对硅衬底进行阳极氧化形成薄氧化铝膜的过程。我们对两种起始材料的情况进行了对比研究：纯铝和含1%硅的铝硅合金。在这两种情况下，铝层的厚度均小于50纳米。观察到在完全相同的条件下，第一种情况中阳极氧化在整个膜被阳极氧化之前就停止了，并且总是存在剩余的未阳极氧化的铝层，而在第二种情况中，铝层被完全阳极氧化，形成了一种氧化铝基体，其中嵌入了尺寸均匀且密度非常高的硅纳米晶体。在这两种情况下，氧化铝膜都是致密且非晶态的。
