Paruchuri Vamsi K, Fa Keqing, Moudgil Brij M, Miller Jan D
Department of Metallurgical Engineering, University of Utah, 135 So. 1460 E. Rm 412, Salt Lake City, Utah 84112, USA.
Appl Spectrosc. 2005 May;59(5):668-72. doi: 10.1366/0003702053945949.
In situ Fourier transform infrared internal reflection spectroscopy (FT-IR/IRS) was used to calculate the adsorption density values for spherical cetyltrimethylammonium bromide (CTAB) micelles at the silica/silicon (SiO2/Si) surface based on a previously developed adsorption density equation. Recent advances in atomic force microscopy (AFM) imaging methodology have led to the ability to image surface micelles, which was not possible previously. These AFM images have been used to independently calculate adsorption density values through offline fast Fourier transform (FFT) analysis. The adsorption density values measured from in situ FT-IR/IRS spectra and from AFM images showed good agreement and provide further validation of the FT-IR/IRS adsorption density equation in the low concentration range.
基于先前开发的吸附密度方程，采用原位傅里叶变换红外内反射光谱法（FT-IR/IRS）计算了球形十六烷基三甲基溴化铵（CTAB）胶束在二氧化硅/硅（SiO2/Si）表面的吸附密度值。原子力显微镜（AFM）成像方法的最新进展使得对表面胶束进行成像成为可能，而这在以前是无法实现的。这些AFM图像已通过离线快速傅里叶变换（FFT）分析用于独立计算吸附密度值。从原位FT-IR/IRS光谱和AFM图像测量得到的吸附密度值显示出良好的一致性，并进一步验证了低浓度范围内的FT-IR/IRS吸附密度方程。
