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氧等离子体处理对硅转移的影响。

Oxygen plasma-treatment effects on Si transfer.

作者信息

Langowski Bryan A, Uhrich Kathryn E

机构信息

Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey 08854, USA.

出版信息

Langmuir. 2005 Jul 5;21(14):6366-72. doi: 10.1021/la046795v.

Abstract

Oxygen plasma-treatment is commonly used to increase the hydrophilicity of poly(dimethylsiloxane) (PDMS) stamps used for microcontact printing (muCP) aqueous-based inks. Review of the literature reveals that a wide range of plasma parameters are currently employed to modify stamp surfaces. However, little is known about the effect of these parameters (e.g., power, chamber pressure, duration) on the undesirable transfer of low-molecular-weight silicon-containing fragments from the stamps that commonly occurs during muCP. To study the effect of oxygen plasma-treatment on Si transfer, unpatterned PDMS stamps were treated with oxygen plasma under various conditions and used to stamp deionized water on plasma-activated poly(methyl methacrylate) (PMMA) substrates. Once stamped, the PMMA substrates were analyzed with X-ray photoelectron spectroscopy (XPS) to quantify and characterize silicon present on the substrate surface. In addition, used PDMS stamps were analyzed with scanning electron microscopy (SEM) to observe topographical changes that occur during oxygen plasma-treatment. XPS results show that all plasma treatments studied significantly reduced the amount of Si transfer from the treated stamps during muCP as compared to untreated PDMS stamps and that the source of transfer is residual PDMS fragments not removed by oxygen plasma. SEM results show that, although the treated stamps undergo a variety of topographical changes, no correlation exists between stamp topography and extent of Si transfer from the stamps.

摘要

氧等离子体处理通常用于提高用于微接触印刷(μCP)水基油墨的聚二甲基硅氧烷(PDMS)印章的亲水性。文献综述表明,目前采用了广泛的等离子体参数来修饰印章表面。然而,对于这些参数(例如功率、腔室压力、持续时间)对μCP过程中印章上低分子量含硅片段的不良转移的影响知之甚少。为了研究氧等离子体处理对硅转移的影响,将未图案化的PDMS印章在各种条件下用氧等离子体处理,并用于在等离子体活化的聚甲基丙烯酸甲酯(PMMA)基板上压印去离子水。压印后,用X射线光电子能谱(XPS)分析PMMA基板,以量化和表征基板表面存在的硅。此外,用扫描电子显微镜(SEM)分析使用过的PDMS印章,以观察氧等离子体处理过程中发生的形貌变化。XPS结果表明,与未处理的PDMS印章相比,所有研究的等离子体处理均显著减少了μCP过程中处理过的印章的硅转移量,并且转移源是未被氧等离子体去除的残留PDMS片段。SEM结果表明,尽管处理过的印章经历了各种形貌变化,但印章形貌与印章硅转移程度之间不存在相关性。

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