Varfolomeev A, Pokalyakin V, Tereshin S, Zaretsky D, Bandyopadhyay S
Russian Research Center, Kurchatov Institute, Kurchatov Sq. 1, Moscow, Russia.
J Nanosci Nanotechnol. 2005 May;5(5):753-8. doi: 10.1166/jnn.2005.105.
Cadmium sulfide nanowires of 10-nm diameter, electrodeposited in porous anodic alumina films, exhibit an electronic bistability that can be harnessed for non-volatile memory. The current-voltage characteristics of the wires show two stable conductance states that are well-separated (conductances differ by more than 4 orders of magnitude) and long lived (longevity > 1 year at room temperature). These two states can encode binary bits 0 and 1. Here we report measurements of the switching time to switch from the high- to the low-conductance state. These measurements also shed some light on the physical mechanisms underlying the bistability.
电沉积在多孔阳极氧化铝膜中的直径为10纳米的硫化镉纳米线表现出一种可用于非易失性存储器的电子双稳性。这些纳米线的电流-电压特性显示出两个稳定的电导状态,它们之间有很好的区分(电导相差超过4个数量级)且寿命很长(在室温下寿命>1年)。这两个状态可以编码二进制位0和1。在此,我们报告了从高电导状态切换到低电导状态的切换时间的测量结果。这些测量结果也为双稳性背后的物理机制提供了一些线索。