Hanson Eric L, Guo Jing, Koch Norbert, Schwartz Jeffrey, Bernasek Steven L
Department of Chemistry, Princeton University, New Jersey 08544-1009, USA.
J Am Chem Soc. 2005 Jul 20;127(28):10058-62. doi: 10.1021/ja050481s.
A new method is described for surface modification of ITO with an electroactive organic monolayer. This procedure was done to enhance hole injection in an electronic device and involves sequential formation of a monolayer of a pi-conjugated organic semiconductor on the indium tin oxide (ITO) surface followed by doping with a strong electron acceptor. The semiconductor monolayer is covalently bound to the ITO, which ensures strong adhesion and interface stability; reduction of the hole injection barrier in these devices is accomplished by formation of a charge-transfer complex by doping within the monolayer. This gives rise to very high current densities in simple single layer devices and double layer light emitting devices compared to those with untreated ITO anodes.
描述了一种用电子活性有机单分子层对氧化铟锡（ITO）进行表面改性的新方法。此过程旨在增强电子器件中的空穴注入，包括在氧化铟锡（ITO）表面依次形成π共轭有机半导体单分子层，然后用强电子受体进行掺杂。半导体单分子层与ITO共价结合，这确保了强附着力和界面稳定性；通过在单分子层内掺杂形成电荷转移复合物，可降低这些器件中的空穴注入势垒。与未处理的ITO阳极相比，这在简单的单层器件和双层发光器件中产生了非常高的电流密度。
